X1 X2 X3 X4 X5 X6 X7 X8 ------ X9 X10 X11

Material System A = AllnGaP N = InGaN   Product Standard U = STANDARD PRODUCT C = CUSTOM PRODUCT X = ENGINEERING PRODUCT The UOE part coding system is used by UOE and our customers to define the specific product required. It is used throughout the order fulfillment process. For more information regarding this system contact UOE Sales and Marketing.   Target Wavelength (nm)   Product Type EP2 = 2” EPIWAFER EP3 = 3” EPIWAFER PRA = DIE, SAMPLE TEST, NO SORT, TAPE OR RING FRAME PRB = DIE, 100%TEST, NO SORT (ASCII File available or inked out) PRC = DIE, 100% TEST, SORTED ON TAPE: "Known Binned Die" PRD = UNTHINNED WAFER, UNDICED, SAMPLE TESTED PRE = CUSTOM PRODUCT PRF = THINNED WAFER, UNDICED SAMPLE TESTED P9A = 9 MIL X 9 MIL DIE SIZE SAM = SAMPLES S9M = 9 MIL X 9 MIL SAMPLE DIE     X9 NOT USED X10 TYPICAL BRIGHTNESS Wavelength Tolerance 1 : +/-5 nm (100% Tested) 2 : +/-5 nm (Typical) 0 : PLACEHOLDER BRIGHTNESS VALUE TABLE   InGaN AlInGaP A 0.5 75-90 mcd B 0.6 90-100 mcd C 0.7 100-110 mcd D 1.0 110-120 mcd E 1.2 120-130 mcd F 1.4 130-140 mcd G 1.6 140-150 mcd H 1.8 150-160 mcd I 2.0 160-170 mcd J 2.2 170-180 mcd K 2.4 180-190 mcd L 2.6 190-200 mcd M 2.8 200-210 mcd N 3.0 210-220 mcd O 3.2 220-230 mcd P 3.4 230-240 mcd Q 3.6 240-250 mcd R 3.8 250-260 mcd 0 0 PLACE HOLDER

Wavelength (nm)

390 405 450 470 505 525 568 590 618 626

UNIROYAL Optoelectronics provides only High Brightness LED technology in EPI, Wafer and Die product formats. Products released and/or in development include those spanning the full color spectrum and the ultra-violet range:

• POWER-Ga(i)N™: InGaN/Al₂O₃ High Brightness LED products, including Wafer and Die formats. This technology provides the highest LED external quantum efficiency for the Ultra-Violet through Green product range as compared to any other type of LED technology available.
• POWER-BRite™: AlInGaP/GaAs High Brightness LED products, including EPI, Wafer and Die formats. This technology builds in High Brightness results through the use of an epitaxial deposited distributed Bragg Reflector (BR) situated between the p-n junction and the absorbing conductive GaAs substrate eliminating the need for a transparent substrate. This technology covers the Yellow-Green to Red spectrum.